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Foranext® fluorogases are used to selectively remove material through plasma etching, wafer dicing, and chamber cleaning. They are also used to change the ...
It is also a versatile system that enables etching, ashing, and ion cleaning by switching gas types and plasma modes. Features. RIE mode and DP mode can be ...
2024/11/4 -Dry etching, also known as plasma etching, utilizes gas phase chemistry to achieve material removal. This method involves ionizing gases and ...
Centura Etch system delivers high-productivity silicon, metal, and dielectric etch. Etching is one of the most critical yet challenging of semiconductor ...
Gas cluster ion beams (GCIBs) consisting of thousands of gas atoms or molecules provide high-density energy near a surface despite the ultra-low energy ions ...
Etching gas is introduced into the reactor through a quartz shower plate, which forms the roof of the plasma reactor. Plasma source power is introduced into the ...
2024/5/1 -In this study, we developed a unique method for the deep anisotropic dry etching of SiO2 using atmospheric gas-phase HF and a patterned ...
The ELIONIX EIS-200ERP enables nanoscale ion beam etching and deposition using ECR ion beam.
In this study, we dry etched SiO2-masked (001) b-Ga2O3 substrates in HCl gas flow at a high temperature without plasma excitation. The ...
Many etching gases (like SF₆, CF₄, or Cl₂) are temperature-sensitive. Variations in gas temperature can affect their reactivity and flow rate, impacting etch ...