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  • 2023/12/14 -For example, fluorine-based gases are commonly used for etching silicon, while chlorine-based gases are used for etching metals such as aluminium and copper.

    2024/2/19 -Wet etching involves using liquid chemicals or etchants to remove material. Dry etching involves removing material using gases or plasmas in a vacuum chamber.

    2023/10/6 -Semiconductor cleaning and etching gas is used in the semiconductor industry for removing contaminants and unwanted materials from the surface of semiconductor ...

    2024/3/26 -Unlike wet etching, which uses chemical solutions to dissolve material, plasma etching operates in a gas phase, making it highly controllable and precise.

    2023/10/11 -While liquid and gas chemical etches typically offer high selectivity, they tend to be isotropic, posing challenges in controlling etch rates. Plasma etching ...

    2024/3/16 -All systems available from Plasma Etch will work with argon gas as well as most gases and gas combinations. ... Plasma etching is performed on printed circuit ...

    2024/2/20 -In the RIE process, the etching gas forms a gas together with the surface material, which is then extracted. ... Minimal under-etching: When compared to some ...

    2023/8/22 -Dry-etching characteristics and surface properties of IGZO films were then investigated according to gas mixture ratio, radio frequency power, and chamber ...

    2023/7/27 -Among the etching gases, we produce and sell trifluoromethane (CHF3), hexafluoroethane (C2F6), carbon tetrafluoride (CF4), octafluorocyclobutane (C4F8), ...

    2024/2/2 -[15][16] [17] [18] The RIE of Si is realized by chlorine (Cl) or bromine (Br) species including Ar plasma. 15,16 On the other hand, the RIE of silicon dioxide ( ...